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| SIEGET (R)45 NPN Silicon RF Transistor Preliminary data * For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB * For oscillators up to 15 GHz * Transition frequency fT = 45 GHz * Gold metalization for high reliability * SIEGET (R) 45 - Line Siemens Grounded Emitter Transistor 45 GHz fT - Line BFP 520 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 520 Marking Ordering Code APs Q62702-F1794 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S 105 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 2.5 12 1 40 4 100 150 -65 ...+150 -65 ...+150 Unit V V V mA mA mW C C C VCEO VCBO VEBO IC IB Ptot Tj TA Tstg RthJS 450 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 520 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V AC characteristics Transition frequency IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA 1dB compression point VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA 1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group Unit max. 3.5 200 35 150 V nA nA - typ. 3 80 V(BR)CEO ICBO IEBO hFE 2.5 50 fT Ccb Cce Ceb F - 45 0.06 0.3 0.35 0.95 - GHz pF pF pF dB Gms - 23 - dB |S21|2 - 21 - dB IP3 25 17 - dBm P-1dB 12 5 - dBm 2) Gma = |S21 / S12| (k-(k2-1)1/2) 22 Sep-09-1998 1998-11-01 BFP 520 Common Emitter S-Parameters f GHz 0.01 0.1 0.5 1 2 3 4 5 6 MAG 0.7244 0.7251 0.6368 0.4768 0.2816 0.225 0.2552 0.3207 0.3675 S11 ANG MAG 32.273 31.637 27.293 19.6 11.02 7.48 5.636 4.488 3.683 S21 ANG 178.6 171.4 140.7 113.5 84.9 67.6 53 39.7 27.5 MAG 0.0007 0.0041 0.0194 0.0351 0.00574 0.0788 0.0994 0.1177 0.1343 S12 ANG 69.4 92.8 75.9 66.5 56.3 49.2 41.5 32.9 24.7 MAG 0.9052 0.9363 0.8523 0.6496 0.3818 0.2407 0.1544 0.095 0.0545 S22 ANG 1.2 -4.4 -26.7 -46 -64.6 -73.6 -95.3 -128.9 177.6 VCE = 2 V, /C = 20 mA -0.7 -8.4 -40.7 -73.6 -123.8 -166 156.2 133.6 118.7 Common Emitter Noise Parameters f GHz F min 1) dB Ga 1) dB opt MAG ANG RN rn - F 50 2) dB |S21|2 2) dB V CE = 2 V, IC = 2 mA 0.9 1.8 2.4 3 4 5 6 0.72 0.95 1.07 1.3 1.35 1.7 1.95 21.5 20 16 14.5 11.6 9.5 8 0.64 0.49 0.45 0.4 0.26 0.14 0.12 14 30 41 54 82 128 151 21.5 19 18 16.5 12.5 9 8 0.43 0.38 0.36 0.33 0.25 0.18 0.16 1.75 1.55 1.6 1.7 1.6 1.85 1.95 16.1 15.14 14.07 13.13 11.49 9.87 8.28 V CE = 2 V, IC = 5 mA 0.89 22 0.9 1.08 20.5 1.8 1.12 18 2.4 1.32 16.2 3 1.35 13.5 4 1.6 11.5 5 1.8 10.5 6 0.49 0.38 0.34 0.29 0.156 0.08 0.07 12 22 33 45 71 120 150 16 14 14 13.5 11 10 8 0.32 0.28 0.28 0.27 0.22 0.2 0.16 1.5 1.38 1.4 1.5 1.45 1.65 1.8 21.94 19.34 17.54 16.01 13.82 11.93 10.23 1) Input matched for minimum noise figure, output for maximum gain 2) Z S = ZL = 50 For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BFP 520 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd aA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd A A V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd fA fA mA V fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = tbd fA N= tbd RS = tbd All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BI = L BO = L CI C'-E'Diode 0.47 0.53 0.23 0.05 0.56 0.58 136 6.9 134 nH nH nH nH nH nH fF fF fF L BO B L BI B' Transistor Chip E' C' L CO C L EI = L EO = L CI = L CO = CBE = CCB = CCE = EHA07389 C BE L EI C CE L EO E Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) (c) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01 BFP 520 For non-linear simulation: * Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. * If you need simulation of thereverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. * Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: * This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01 BFP 520 Total power dissipation P tot = f (T A*, TS) * Package mounted on epoxy Transition frequency fT = f (IC) f = 2 GHz VCE = parameter in V 52 GHz 2 120 mW 100 90 44 40 P tot 80 70 60 TS TA fT 36 32 28 24 1 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150 20 16 12 8 4 0 0 5 10 15 20 25 30 0.75 0.5 35 mA 45 TA,TS IC Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 1 RthJS Pmax / PDC K/W - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 66 Sep-09-1998 1998-11-01 BFP 520 Power gain G ma, G ms, |S 21|2 = f ( f ) VCE = 2V, I C = 20 mA 44 dB Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 32 dB 0.9 36 32 28 24 16 20 4 5 6 24 1.8 2.4 G ms G 20 G 3 Gma 16 12 |S21 |2 12 8 4 4 0 0.0 1.0 2.0 3.0 4.0 GHz 8 6.0 0 0 5 10 15 20 25 30 35 mA 45 f IC Power gain G ma, G ms = f (V CE) I C = 20 mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz 0.35 0.9 f = parameter in GHz 32 dB pF 24 1.8 2.4 0.25 G 20 3 4 5 Ccb 0.20 0.15 0.10 0.05 0.00 0.0 16 12 6 8 4 0 0.0 0.5 1.0 1.5 2.0 V 3.0 0.5 1.0 1.5 2.0 V 3.0 VCE VCB Semiconductor Group Semiconductor Group 77 Sep-09-1998 1998-11-01 BFP 520 Noise figure F = f (IC) Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt 3.0 VCE = 2 V, f = 1.8 GHz 3.0 dB dB 2.0 2.0 F 1.5 F 1.5 1.0 0.5 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 1.0 Zs = 50Ohm Zs = Zsopt 0.5 0.0 0 5 10 15 20 25 30 mA 40 0.0 0 5 10 15 20 25 30 mA 40 IC IC Noise figure F = f ( f ) Source impedance for min. Noise Figuren vers. Frequency VCE = 2 V, ZS = Z Sopt 3.0 VCE = 2 V, I C = 2 mA / 5 mA +j50 dB +j25 +j100 +j10 2.0 4GHz 5GHz 6GHz 3GHz 1.8GHz 0.9GHz F 1.5 0 10 25 50 100 0.45GHz 1.0 -j10 2mA 5mA 0.5 IC = 5 mA IC = 2 mA -j25 -j50 -j100 0.0 0.0 1.0 2.0 3.0 4.0 5.0 GHz 6.5 f Semiconductor Group Semiconductor Group 88 Sep-09-1998 1998-11-01 |
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